| PART |
Description |
Maker |
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FT0018 FT0018-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| IXFN420N10T |
GigaMOS Trench HiperFET Power MOSFET
|
IXYS Corporation
|
| PSTG50HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
| SFF85N06Z SFF85N06M |
55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
| IXTQ50N25T IXTP50N25T IXTA50N25T IXTH50N25T |
Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
| IXFM13N90 IXFH10N90 IXYSCORP-IXFT13N90 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强HiPerFET功率MOSFET) 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs
|
IXYS, Corp.
ETC
IXYS Corporation
|
| SFF35N20Z SFF35N20M |
55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF80N10Z SFF80N10M |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET
|
http://
SSDI[Solid States Devices, Inc]
|
| IXTA86N20T IXTP86N20T |
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
